Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process

Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process

The main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic reflectometer module by integrating aperture technology...

Full description

Bibliographic Details
Main Authors: Yi-Sha Ku, Chun-Wei Lo, Cheng-Kang Lee, Chia-Hung Cho, Wen-Qii Cheah, Po-Wen Chou
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Metrology
Subjects:
through-silicon via
spectral reflectometer
high aspect ratio
Online Access:https://www.mdpi.com/2673-8244/3/4/22

Internet

https://www.mdpi.com/2673-8244/3/4/22

Similar Items