Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process
The main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic reflectometer module by integrating aperture technology...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-11-01
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| Series: | Metrology |
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| Online Access: | https://www.mdpi.com/2673-8244/3/4/22 |
| _version_ | 1797380061637115904 |
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| author | Yi-Sha Ku Chun-Wei Lo Cheng-Kang Lee Chia-Hung Cho Wen-Qii Cheah Po-Wen Chou |
| author_facet | Yi-Sha Ku Chun-Wei Lo Cheng-Kang Lee Chia-Hung Cho Wen-Qii Cheah Po-Wen Chou |
| author_sort | Yi-Sha Ku |
| collection | DOAJ |
| description | The main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic reflectometer module by integrating aperture technology, resulting in a substantial amplification of interference signals. Our system offers the flexibility to conduct measurements on an average number of TSVs, individual TSVs, or specific periodic arrays of TSVs. Additionally, we demonstrate the utility of the spectroscopic reflectometer as a non-destructive, high-speed metrology solution for in-line monitoring of TSV etch uniformity. Through a series of experimental trials in a reactive ion etch (RIE) process, we show that leveraging feedback data from the reflectometer leads to marked improvements in etch depth uniformity. |
| first_indexed | 2024-03-08T20:32:02Z |
| format | Article |
| id | doaj.art-8a216cfd7b7a451f9c9e834b4a6d7bad |
| institution | Directory Open Access Journal |
| issn | 2673-8244 |
| language | English |
| last_indexed | 2024-03-08T20:32:02Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Metrology |
| spelling | doaj.art-8a216cfd7b7a451f9c9e834b4a6d7bad2023-12-22T14:24:58ZengMDPI AGMetrology2673-82442023-11-013436537610.3390/metrology3040022Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias ProcessYi-Sha Ku0Chun-Wei Lo1Cheng-Kang Lee2Chia-Hung Cho3Wen-Qii Cheah4Po-Wen Chou5Center for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, TaiwanCenter for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, TaiwanCenter for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, TaiwanCenter for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, TaiwanCenter for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, TaiwanCenter for Measurement Standards, Industrial Technology Research Institute, Bldg. 1, 321 Sec. 2, Kuang Fu Rd., Hsinchu 300, TaiwanThe main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic reflectometer module by integrating aperture technology, resulting in a substantial amplification of interference signals. Our system offers the flexibility to conduct measurements on an average number of TSVs, individual TSVs, or specific periodic arrays of TSVs. Additionally, we demonstrate the utility of the spectroscopic reflectometer as a non-destructive, high-speed metrology solution for in-line monitoring of TSV etch uniformity. Through a series of experimental trials in a reactive ion etch (RIE) process, we show that leveraging feedback data from the reflectometer leads to marked improvements in etch depth uniformity.https://www.mdpi.com/2673-8244/3/4/22through-silicon viaspectral reflectometerhigh aspect ratio |
| spellingShingle | Yi-Sha Ku Chun-Wei Lo Cheng-Kang Lee Chia-Hung Cho Wen-Qii Cheah Po-Wen Chou Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process Metrology through-silicon via spectral reflectometer high aspect ratio |
| title | Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process |
| title_full | Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process |
| title_fullStr | Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process |
| title_full_unstemmed | Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process |
| title_short | Spectroscopic Reflectometry for Optimizing 3D Through-Silicon-Vias Process |
| title_sort | spectroscopic reflectometry for optimizing 3d through silicon vias process |
| topic | through-silicon via spectral reflectometer high aspect ratio |
| url | https://www.mdpi.com/2673-8244/3/4/22 |
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