Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO<sub>2</sub>-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS<sub>2</sub>) c...

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Bibliographic Details
Main Authors: Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Atomic threshold switching
threshold switching device
2D ATS-FET
Online Access:https://ieeexplore.ieee.org/document/9519692/

Internet

https://ieeexplore.ieee.org/document/9519692/

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