Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO<sub>2</sub>-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS<sub>2</sub>) c...
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| Format: | Article |
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IEEE
2021-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9519692/ |
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| author | Sojin Jeong Sangwoo Han Ho-Jun Lee Deokjoon Eom Gisu Youm Yejoo Choi Seungjun Moon Kyungjin Ahn Jinju Oh Changhwan Shin |
| author_facet | Sojin Jeong Sangwoo Han Ho-Jun Lee Deokjoon Eom Gisu Youm Yejoo Choi Seungjun Moon Kyungjin Ahn Jinju Oh Changhwan Shin |
| author_sort | Sojin Jeong |
| collection | DOAJ |
| description | A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO<sub>2</sub>-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS<sub>2</sub>) channel material. We optimized/developed the Ag/HfO<sub>2</sub>-based TS device because its characteristic is associated to the way how to achieve high performance of the 2D ATS-FET. By reducing the effective device area of the Ag/HfO<sub>2</sub>-based TS device down to <inline-formula> <tex-math notation="LaTeX">$4~\mu \text{m}^{2}$ </tex-math></inline-formula>, low threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}} \sim 0.42$ </tex-math></inline-formula> V), low threshold current (I<sub>T</sub>, drain current at the threshold voltage, <inline-formula> <tex-math notation="LaTeX">$\sim 3.79 \times 10^{-11}$ </tex-math></inline-formula> A), and low V<sub>T</sub> variation (~0.09 V) were achieved. This is because the randomly formed filaments and electric field are better controlled with the scaled effective area. Next, the titanium (Ti)-injection barrier layer was inserted between the top electrode and the switching layer, while maintaining the optimized area in the TS device. The inserted Ti-injection barrier layer prevents the migration of Ag ions into the switching layer, enabling the stable TS operation even under the compliance current of <inline-formula> <tex-math notation="LaTeX">$100~\mu \text{A}$ </tex-math></inline-formula>. Additionally, it locally restricts the region where the filaments are created inside the switching layer, resulting in a 17% lower V<sub>T</sub> variation and stable I<sub>T</sub> to approximately <inline-formula> <tex-math notation="LaTeX">$\sim 1.5 \times 10^{-11}$ </tex-math></inline-formula> A in 100 cycles. Due to the low off-state leakage current and low variation characteristic of the optimized AgTi/HfO<sub>2</sub>-based TS device, the 2D ATS-FET (vs. 2D baseline-FET) shows the reduction of off-state leakage current (by <inline-formula> <tex-math notation="LaTeX">$\sim 10^{2}$ </tex-math></inline-formula> in sub-threshold region) and the stable switching characteristic. The proposed 2D ATS-FET shows stably steep switching characteristics, e.g., sub-threshold swing under forward bias (~19 mV/decade) and reverse bias (~26 mV/decade), because of its abruptly switching characteristics of the TS device. |
| first_indexed | 2024-12-21T15:35:22Z |
| format | Article |
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| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-21T15:35:22Z |
| publishDate | 2021-01-01 |
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| series | IEEE Access |
| spelling | doaj.art-8a24f2572cf74700a250f05d173240542022-12-21T18:58:39ZengIEEEIEEE Access2169-35362021-01-01911695311696110.1109/ACCESS.2021.31063319519692Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching DeviceSojin Jeong0https://orcid.org/0000-0001-5853-2948Sangwoo Han1https://orcid.org/0000-0003-3161-2993Ho-Jun Lee2https://orcid.org/0000-0002-5500-459XDeokjoon Eom3https://orcid.org/0000-0002-5473-3088Gisu Youm4https://orcid.org/0000-0003-2140-9756Yejoo Choi5Seungjun Moon6Kyungjin Ahn7Jinju Oh8Changhwan Shin9https://orcid.org/0000-0001-6057-3773Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of KoreaA two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO<sub>2</sub>-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS<sub>2</sub>) channel material. We optimized/developed the Ag/HfO<sub>2</sub>-based TS device because its characteristic is associated to the way how to achieve high performance of the 2D ATS-FET. By reducing the effective device area of the Ag/HfO<sub>2</sub>-based TS device down to <inline-formula> <tex-math notation="LaTeX">$4~\mu \text{m}^{2}$ </tex-math></inline-formula>, low threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}} \sim 0.42$ </tex-math></inline-formula> V), low threshold current (I<sub>T</sub>, drain current at the threshold voltage, <inline-formula> <tex-math notation="LaTeX">$\sim 3.79 \times 10^{-11}$ </tex-math></inline-formula> A), and low V<sub>T</sub> variation (~0.09 V) were achieved. This is because the randomly formed filaments and electric field are better controlled with the scaled effective area. Next, the titanium (Ti)-injection barrier layer was inserted between the top electrode and the switching layer, while maintaining the optimized area in the TS device. The inserted Ti-injection barrier layer prevents the migration of Ag ions into the switching layer, enabling the stable TS operation even under the compliance current of <inline-formula> <tex-math notation="LaTeX">$100~\mu \text{A}$ </tex-math></inline-formula>. Additionally, it locally restricts the region where the filaments are created inside the switching layer, resulting in a 17% lower V<sub>T</sub> variation and stable I<sub>T</sub> to approximately <inline-formula> <tex-math notation="LaTeX">$\sim 1.5 \times 10^{-11}$ </tex-math></inline-formula> A in 100 cycles. Due to the low off-state leakage current and low variation characteristic of the optimized AgTi/HfO<sub>2</sub>-based TS device, the 2D ATS-FET (vs. 2D baseline-FET) shows the reduction of off-state leakage current (by <inline-formula> <tex-math notation="LaTeX">$\sim 10^{2}$ </tex-math></inline-formula> in sub-threshold region) and the stable switching characteristic. The proposed 2D ATS-FET shows stably steep switching characteristics, e.g., sub-threshold swing under forward bias (~19 mV/decade) and reverse bias (~26 mV/decade), because of its abruptly switching characteristics of the TS device.https://ieeexplore.ieee.org/document/9519692/Atomic threshold switchingthreshold switching device2D ATS-FET |
| spellingShingle | Sojin Jeong Sangwoo Han Ho-Jun Lee Deokjoon Eom Gisu Youm Yejoo Choi Seungjun Moon Kyungjin Ahn Jinju Oh Changhwan Shin Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device IEEE Access Atomic threshold switching threshold switching device 2D ATS-FET |
| title | Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device |
| title_full | Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device |
| title_fullStr | Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device |
| title_full_unstemmed | Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device |
| title_short | Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device |
| title_sort | abruptly switching mos x2082 channel atomic threshold switching field effect transistor with agti hfo x2082 based threshold switching device |
| topic | Atomic threshold switching threshold switching device 2D ATS-FET |
| url | https://ieeexplore.ieee.org/document/9519692/ |
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