Self-Compliance and High Performance Pt/HfO<sub>x</sub>/Ti RRAM Achieved through Annealing

Self-Compliance and High Performance Pt/HfO<sub>x</sub>/Ti RRAM Achieved through Annealing

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO<sub>x</sub>/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 &#176;C decreased, and the switching ratio and unif...

Full description

Bibliographic Details
Main Authors: Lei Wu, Hongxia Liu, Jinfu Lin, Shulong Wang
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Nanomaterials
Subjects:
self-compliance
rram
annealing
hfox
switching mechanism
Online Access:https://www.mdpi.com/2079-4991/10/3/457

Internet

https://www.mdpi.com/2079-4991/10/3/457

Similar Items