AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional...
| Main Authors: | , , , , , , , , , , , , |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
Wiley
2022-01-01
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| סדרה: | Advances in Condensed Matter Physics |
| גישה מקוונת: | http://dx.doi.org/10.1155/2022/5885992 |