Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In<sub>0.83</sub>Ga<sub>0.17</sub>As Photodetectors

In the planar-type InGaAs photodetector (PD) structure, a diffusion barrier has the effect of modifying the zinc diffusion profile in the interface between the cap and the absorption layer to improve device performance. In this work, an n-type In<sub>0.83</sub>Ga<sub>0.17</sub&g...

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Bibliographic Details
Main Authors: Zhejing Jiao, Tianyu Guo, Gaoyu Zhou, Yi Gu, Bowen Liu, Yizhen Yu, Chunlei Yu, Yingjie Ma, Tao Li, Xue Li
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/13/7/1339