Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In<sub>0.83</sub>Ga<sub>0.17</sub>As Photodetectors
In the planar-type InGaAs photodetector (PD) structure, a diffusion barrier has the effect of modifying the zinc diffusion profile in the interface between the cap and the absorption layer to improve device performance. In this work, an n-type In<sub>0.83</sub>Ga<sub>0.17</sub&g...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2024-04-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/13/7/1339 |