Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Abstract Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current–voltage (I–V) characterization. The static I–V dependencies demonstrate the high quality of fa...

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Bibliographic Details
Main Authors: Ferdinand Gasparyan, Ihor Zadorozhnyi, Hrant Khondkaryan, Armen Arakelyan, Svetlana Vitusevich
Format: Article
Language:English
Published: SpringerOpen 2018-03-01
Series:Nanoscale Research Letters
Subjects:
Nanowire field-effect transistors
Biochemical
Photoexcitation
Channel length effects
Online Access:http://link.springer.com/article/10.1186/s11671-018-2494-5

Internet

http://link.springer.com/article/10.1186/s11671-018-2494-5

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