Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal...

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Bibliographic Details
Main Authors: Yong Du, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Nanomaterials
Subjects:
III-V on Si
heteroepitaxy
threading dislocation densities (TDDs)
anti-phase boundaries (APBs)
selective epitaxial growth (SEG)
Online Access:https://www.mdpi.com/2079-4991/12/5/741

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https://www.mdpi.com/2079-4991/12/5/741

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