Millimeter-wave noise modeling of nanoscale MOSFETs
Based on the physical structure of 40 nm MOSFETs, this paper establishes a unified MOSFET millimeter-wave noise model to characterize the characteristics of drain-current noise, inducted gate-current noise and cross-correlation noise between them. By introducing the gate overdrive effect into the hi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2018-08-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000088033 |