Millimeter-wave noise modeling of nanoscale MOSFETs
Based on the physical structure of 40 nm MOSFETs, this paper establishes a unified MOSFET millimeter-wave noise model to characterize the characteristics of drain-current noise, inducted gate-current noise and cross-correlation noise between them. By introducing the gate overdrive effect into the hi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
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National Computer System Engineering Research Institute of China
2018-08-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000088033 |
| _version_ | 1828196353679818752 |
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| author | Peng Xiaomei Zhao Aifeng Wang Jun |
| author_facet | Peng Xiaomei Zhao Aifeng Wang Jun |
| author_sort | Peng Xiaomei |
| collection | DOAJ |
| description | Based on the physical structure of 40 nm MOSFETs, this paper establishes a unified MOSFET millimeter-wave noise model to characterize the characteristics of drain-current noise, inducted gate-current noise and cross-correlation noise between them. By introducing the gate overdrive effect into the high frequency noise model so that the uniform models had good smoothness, accuracy and continuity. Finally, the simulation results of the model are compared with the traditional high-frequency noise model, the validity and accuracy of the model are verified by comparing the four-noise parameters of the model with the traditional model and the measured data. |
| first_indexed | 2024-04-12T10:00:03Z |
| format | Article |
| id | doaj.art-8ab6143fd91340dfa81e633a2b2b7fc7 |
| institution | Directory Open Access Journal |
| issn | 0258-7998 |
| language | zho |
| last_indexed | 2024-04-12T10:00:03Z |
| publishDate | 2018-08-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj.art-8ab6143fd91340dfa81e633a2b2b7fc72022-12-22T03:37:36ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982018-08-01448313410.16157/j.issn.0258-7998.1７49663000088033Millimeter-wave noise modeling of nanoscale MOSFETsPeng Xiaomei0Zhao Aifeng1Wang Jun2School of Information Engineering，Southwest University of Science and Technology，Mianyang 621010，ChinaSchool of Information Engineering，Southwest University of Science and Technology，Mianyang 621010，ChinaSchool of Information Engineering，Southwest University of Science and Technology，Mianyang 621010，ChinaBased on the physical structure of 40 nm MOSFETs, this paper establishes a unified MOSFET millimeter-wave noise model to characterize the characteristics of drain-current noise, inducted gate-current noise and cross-correlation noise between them. By introducing the gate overdrive effect into the high frequency noise model so that the uniform models had good smoothness, accuracy and continuity. Finally, the simulation results of the model are compared with the traditional high-frequency noise model, the validity and accuracy of the model are verified by comparing the four-noise parameters of the model with the traditional model and the measured data.http://www.chinaaet.com/article/3000088033MOSFETcorrelated noisemillimeter-wavefour noise parameters |
| spellingShingle | Peng Xiaomei Zhao Aifeng Wang Jun Millimeter-wave noise modeling of nanoscale MOSFETs Dianzi Jishu Yingyong MOSFET correlated noise millimeter-wave four noise parameters |
| title | Millimeter-wave noise modeling of nanoscale MOSFETs |
| title_full | Millimeter-wave noise modeling of nanoscale MOSFETs |
| title_fullStr | Millimeter-wave noise modeling of nanoscale MOSFETs |
| title_full_unstemmed | Millimeter-wave noise modeling of nanoscale MOSFETs |
| title_short | Millimeter-wave noise modeling of nanoscale MOSFETs |
| title_sort | millimeter wave noise modeling of nanoscale mosfets |
| topic | MOSFET correlated noise millimeter-wave four noise parameters |
| url | http://www.chinaaet.com/article/3000088033 |
| work_keys_str_mv | AT pengxiaomei millimeterwavenoisemodelingofnanoscalemosfets AT zhaoaifeng millimeterwavenoisemodelingofnanoscalemosfets AT wangjun millimeterwavenoisemodelingofnanoscalemosfets |