Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-base...

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Bibliographic Details
Main Authors: Yue Ma, Jinshun Bi, Hanbin Wang, Linjie Fan, Biyao Zhao, Lizhi Shen, Mengxin Liu
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Nanomaterials
Subjects:
random telegraph noise (RTN)
fully depleted silicon-on-insulator (FDSOI)
cryogenic temperatures
trap depth
inversion layer thickness
Online Access:https://www.mdpi.com/2079-4991/12/23/4344

Internet

https://www.mdpi.com/2079-4991/12/23/4344

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