Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror

We report long cavity (65 λ ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside dielectric concave mirror, an ion implanted current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 10 μ m aperture and a curved mirro...

Full description

Bibliographic Details
Main Authors: Nathan C. Palmquist, Jared A. Kearns, Stephen Gee, Arturo Juan, Srinivas Gandrothula, Michael Lam, Steven P. Denbaars, Shuji Nakamura
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Applied Physics Express
Subjects:
GaN VCSEL
tunnel junction
long cavity
nanoporous
Online Access:https://doi.org/10.35848/1882-0786/ad119b

Internet

https://doi.org/10.35848/1882-0786/ad119b

Similar Items