Hf-based high-<it>k </it>materials for Si nanocrystal floating gate memories
<p>Abstract</p> <p>Pure and Si-rich HfO<sub>2 </sub>layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-<it>k</it>/Si-nanocrystals-SiO<sub>2</sub>/SiO<sub>2 </sub>memory structures...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/172 |