Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio

Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio

Abstract Solar‐blind photodetectors have attracted extensive attention due to their advantages such as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au Schottky avalanche photodetector (APD) is fabricated based on β‐Ga2O3 epitaxial film on the sapphire substrate grow...

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Bibliographic Details
Main Authors: Shiqi Yan, Teng Jiao, Zijian Ding, Xinyu Zhou, Xingqi Ji, Xin Dong, Jiawei Zhang, Qian Xin, Aimin Song
Format: Article
Language:English
Published: Wiley-VCH 2023-11-01
Series:Advanced Electronic Materials
Subjects:
avalanche photodetectors
Ga2O3
photo‐to‐dark current ratio 
schottky junction
solar‐blind photodetectors
Online Access:https://doi.org/10.1002/aelm.202300297

Internet

https://doi.org/10.1002/aelm.202300297

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