Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio
Abstract Solar‐blind photodetectors have attracted extensive attention due to their advantages such as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au Schottky avalanche photodetector (APD) is fabricated based on β‐Ga2O3 epitaxial film on the sapphire substrate grow...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-11-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300297 |
| _version_ | 1797632559269543936 |
|---|---|
| author | Shiqi Yan Teng Jiao Zijian Ding Xinyu Zhou Xingqi Ji Xin Dong Jiawei Zhang Qian Xin Aimin Song |
| author_facet | Shiqi Yan Teng Jiao Zijian Ding Xinyu Zhou Xingqi Ji Xin Dong Jiawei Zhang Qian Xin Aimin Song |
| author_sort | Shiqi Yan |
| collection | DOAJ |
| description | Abstract Solar‐blind photodetectors have attracted extensive attention due to their advantages such as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au Schottky avalanche photodetector (APD) is fabricated based on β‐Ga2O3 epitaxial film on the sapphire substrate grown by metal–organic chemical vapor deposition. The Schottky APD exhibits a high responsivity of 9780.23 A W−1, an ultrahigh photo‐to‐dark current ratio of 1.88 × 107, an external quantum efficiency of 4.77 × 106%, a specific detectivity of 9.48 × 1014 Jones, with an ultrahigh gain of 1 × 106 under 254 nm light illumination at 60 V reverse bias, indicating high application potential for solar‐blind imaging. The superior photoresponse performances ascribe to the effective carrier avalanche multiplication, which contributes to the high photocurrent, and the high quality Schottky junction depletion, which leads to the low dark current. |
| first_indexed | 2024-03-11T11:39:40Z |
| format | Article |
| id | doaj.art-8af64e18c4514a21971896a0bf1dd260 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T11:39:40Z |
| publishDate | 2023-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-8af64e18c4514a21971896a0bf1dd2602023-11-10T08:29:50ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-11-01911n/an/a10.1002/aelm.202300297Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current RatioShiqi Yan0Teng Jiao1Zijian Ding2Xinyu Zhou3Xingqi Ji4Xin Dong5Jiawei Zhang6Qian Xin7Aimin Song8Shandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaState Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaState Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaShandong Technology Center of Nanodevices and Integration School of Microelectronics Shandong University Jinan 250100 ChinaAbstract Solar‐blind photodetectors have attracted extensive attention due to their advantages such as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au Schottky avalanche photodetector (APD) is fabricated based on β‐Ga2O3 epitaxial film on the sapphire substrate grown by metal–organic chemical vapor deposition. The Schottky APD exhibits a high responsivity of 9780.23 A W−1, an ultrahigh photo‐to‐dark current ratio of 1.88 × 107, an external quantum efficiency of 4.77 × 106%, a specific detectivity of 9.48 × 1014 Jones, with an ultrahigh gain of 1 × 106 under 254 nm light illumination at 60 V reverse bias, indicating high application potential for solar‐blind imaging. The superior photoresponse performances ascribe to the effective carrier avalanche multiplication, which contributes to the high photocurrent, and the high quality Schottky junction depletion, which leads to the low dark current.https://doi.org/10.1002/aelm.202300297avalanche photodetectorsGa2O3photo‐to‐dark current ratio schottky junctionsolar‐blind photodetectors |
| spellingShingle | Shiqi Yan Teng Jiao Zijian Ding Xinyu Zhou Xingqi Ji Xin Dong Jiawei Zhang Qian Xin Aimin Song Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio Advanced Electronic Materials avalanche photodetectors Ga2O3 photo‐to‐dark current ratio schottky junction solar‐blind photodetectors |
| title | Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio |
| title_full | Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio |
| title_fullStr | Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio |
| title_full_unstemmed | Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio |
| title_short | Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio |
| title_sort | ga2o3 schottky avalanche solar blind photodiode with high responsivity and photo to dark current ratio |
| topic | avalanche photodetectors Ga2O3 photo‐to‐dark current ratio schottky junction solar‐blind photodetectors |
| url | https://doi.org/10.1002/aelm.202300297 |
| work_keys_str_mv | AT shiqiyan ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT tengjiao ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT zijianding ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT xinyuzhou ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT xingqiji ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT xindong ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT jiaweizhang ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT qianxin ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio AT aiminsong ga2o3schottkyavalanchesolarblindphotodiodewithhighresponsivityandphototodarkcurrentratio |