Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integrat...

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Bibliographic Details
Main Authors: Furqan Zahoor, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Micromachines
Subjects:
multiple valued logic (MVL)
resistive random access memory (RRAM)
carbon nanotube field effect transistor (CNTFET)
ternary logic systems
emerging technologies
innovation
Online Access:https://www.mdpi.com/2072-666X/12/11/1288

Internet

https://www.mdpi.com/2072-666X/12/11/1288

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