Hall element with two Schottky barrier contacts Al-p-Si

Hall element with two Schottky barrier contacts Al-p-Si

Way of the fabrication and results of studies of electrical and photoelectric characteristics of the Hall element with two current contacts and two Hall potential contacts on one surface of the silicon plate and two contacts Al-p-Si with the barrier Schottky on inverse surface of the plate, are...

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Bibliographic Details
Main Author: R. B. Burlakov
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Budgetary Educational Institution of Higher Education 2020-09-01
Series:Омский научный вестник
Subjects:
way of the fabrication of the hall element
silicon p-type
schottky barrier contacts al-p-si
Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/60-65%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf

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https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/60-65%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf

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