Hall element with two Schottky barrier contacts Al-p-Si
Way of the fabrication and results of studies of electrical and photoelectric characteristics of the Hall element with two current contacts and two Hall potential contacts on one surface of the silicon plate and two contacts Al-p-Si with the barrier Schottky on inverse surface of the plate, are...
| Yazar: | |
|---|---|
| Materyal Türü: | Makale |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-09-01
|
| Seri Bilgileri: | Омский научный вестник |
| Konular: | |
| Online Erişim: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/60-65%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |