200 mm-scale growth of 2D layered GaSe with preferential orientation

200 mm-scale growth of 2D layered GaSe with preferential orientation

In this article, we present a fab-compatible metal–organic chemical vapor deposition growth process, realized in a hydrogen ambience, of two-dimensional (2D) layered GaSe on 200 mm diameter Si(111) wafers. Atomic scale characterization reveals initial stages of growth consisting of passivation of th...

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Bibliographic Details
Main Authors: Mickaël Martin, Pascal Pochet, Hanako Okuno, Carlos Alvarez, Edith Bellet-Amalric, Pauline Hauchecorne, Théo Levert, Bernard Pelissier, Łukasz Borowik, Franck Bassani, Sylvain David, Jeremy Moeyaert, Thierry Baron
Format: Article
Language:English
Published: AIP Publishing LLC 2022-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0087684

Internet

http://dx.doi.org/10.1063/5.0087684

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