Nanoclustering in Silicon Induced by Oxygen Ions Implanted

Nanoclustering in Silicon Induced by Oxygen Ions Implanted

We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has be...

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Bibliographic Details
Main Authors: D. Manno, A. Serra, E. Filippo, M. Rossi, G. Quarta, L. Maruccio, L. Calcagnile
Format: Article
Language:English
Published: Hindawi - SAGE Publishing 2011-11-01
Series:Nanomaterials and Nanotechnology
Subjects:
Electrical transport
Hall effect
STM
Nanostructures
Online Access:http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted

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http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted

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