Nanoclustering in Silicon Induced by Oxygen Ions Implanted
We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has be...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi - SAGE Publishing
2011-11-01
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| Series: | Nanomaterials and Nanotechnology |
| Subjects: | |
| Online Access: | http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted |
| _version_ | 1797428028680175616 |
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| author | D. Manno A. Serra E. Filippo M. Rossi G. Quarta L. Maruccio L. Calcagnile |
| author_facet | D. Manno A. Serra E. Filippo M. Rossi G. Quarta L. Maruccio L. Calcagnile |
| author_sort | D. Manno |
| collection | DOAJ |
| description | We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has been used. The surface modifications and the structure of nanoclusters are investigated. The topographic images, obtained by scanning tunnelling microscope showed that the surface is covered with a dense array of tetragonal nanostructures oriented with respect to the substrate. Raman spectroscopy data allowed us to estimate an average cluster size of about 50 nm. Resistivity and Hall effect measurements evidenced that the electron transport in the implanted silicon samples is affected by the nanoclusters array and it could be explained by thermally activated hopping between localized states. |
| first_indexed | 2024-03-09T08:53:14Z |
| format | Article |
| id | doaj.art-8b73d925592c42f5a5d42dd80f5724ab |
| institution | Directory Open Access Journal |
| issn | 1847-9804 |
| language | English |
| last_indexed | 2024-03-09T08:53:14Z |
| publishDate | 2011-11-01 |
| publisher | Hindawi - SAGE Publishing |
| record_format | Article |
| series | Nanomaterials and Nanotechnology |
| spelling | doaj.art-8b73d925592c42f5a5d42dd80f5724ab2023-12-02T13:51:37ZengHindawi - SAGE PublishingNanomaterials and Nanotechnology1847-98042011-11-0112http://dx.doi.org/10.5772/50957Nanoclustering in Silicon Induced by Oxygen Ions ImplantedD. MannoA. SerraE. FilippoM. RossiG. QuartaL. MaruccioL. CalcagnileWe report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has been used. The surface modifications and the structure of nanoclusters are investigated. The topographic images, obtained by scanning tunnelling microscope showed that the surface is covered with a dense array of tetragonal nanostructures oriented with respect to the substrate. Raman spectroscopy data allowed us to estimate an average cluster size of about 50 nm. Resistivity and Hall effect measurements evidenced that the electron transport in the implanted silicon samples is affected by the nanoclusters array and it could be explained by thermally activated hopping between localized states.http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted Electrical transportHall effectSTMNanostructures |
| spellingShingle | D. Manno A. Serra E. Filippo M. Rossi G. Quarta L. Maruccio L. Calcagnile Nanoclustering in Silicon Induced by Oxygen Ions Implanted Nanomaterials and Nanotechnology Electrical transport Hall effect STM Nanostructures |
| title | Nanoclustering in Silicon Induced by Oxygen Ions Implanted |
| title_full | Nanoclustering in Silicon Induced by Oxygen Ions Implanted |
| title_fullStr | Nanoclustering in Silicon Induced by Oxygen Ions Implanted |
| title_full_unstemmed | Nanoclustering in Silicon Induced by Oxygen Ions Implanted |
| title_short | Nanoclustering in Silicon Induced by Oxygen Ions Implanted |
| title_sort | nanoclustering in silicon induced by oxygen ions implanted |
| topic | Electrical transport Hall effect STM Nanostructures |
| url | http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted |
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