Nanoclustering in Silicon Induced by Oxygen Ions Implanted
We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has be...
Main Authors: | D. Manno, A. Serra, E. Filippo, M. Rossi, G. Quarta, L. Maruccio, L. Calcagnile |
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Format: | Article |
Language: | English |
Published: |
Hindawi - SAGE Publishing
2011-11-01
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Series: | Nanomaterials and Nanotechnology |
Subjects: | |
Online Access: | http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted |
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