Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

<p>Abstract</p> <p>The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow posit...

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Bibliographic Details
Main Authors: Ferragut R, Calloni A, Dupasquier A, Isella G
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Positron annihilation spectroscopy
Ultra-thin body films
SiGe semiconductors
Point defects
Online Access:http://dx.doi.org/10.1007/s11671-010-9818-4

Internet

http://dx.doi.org/10.1007/s11671-010-9818-4

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