Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
<p>Abstract</p> <p>The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow posit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9818-4 |
| _version_ | 1827884189415899136 |
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| author | Ferragut R Calloni A Dupasquier A Isella G |
| author_facet | Ferragut R Calloni A Dupasquier A Isella G |
| author_sort | Ferragut R |
| collection | DOAJ |
| description | <p>Abstract</p> <p>The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO<sub>2</sub>/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films.</p> |
| first_indexed | 2024-03-12T19:24:56Z |
| format | Article |
| id | doaj.art-8b91ea33a8324705a34293824009b9ca |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:24:56Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-8b91ea33a8324705a34293824009b9ca2023-08-02T04:56:25ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151219421947Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron AnnihilationFerragut RCalloni ADupasquier AIsella G<p>Abstract</p> <p>The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO<sub>2</sub>/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films.</p>http://dx.doi.org/10.1007/s11671-010-9818-4Positron annihilation spectroscopyUltra-thin body filmsSiGe semiconductorsPoint defects |
| spellingShingle | Ferragut R Calloni A Dupasquier A Isella G Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation Nanoscale Research Letters Positron annihilation spectroscopy Ultra-thin body films SiGe semiconductors Point defects |
| title | Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation |
| title_full | Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation |
| title_fullStr | Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation |
| title_full_unstemmed | Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation |
| title_short | Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation |
| title_sort | defect characterization in sige soi epitaxial semiconductors by positron annihilation |
| topic | Positron annihilation spectroscopy Ultra-thin body films SiGe semiconductors Point defects |
| url | http://dx.doi.org/10.1007/s11671-010-9818-4 |
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