GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (<i>BV</i>) and the specific on-resistance (<i>R<sub>on,sp</sub></i>) by Breakdown Point Transfer (BPT), which transfers the breakdown point fr...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-05-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/14/6/1166 |