GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (<i>BV</i>) and the specific on-resistance (<i>R<sub>on,sp</sub></i>) by Breakdown Point Transfer (BPT), which transfers the breakdown point fr...

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Bibliographic Details
Main Authors: Xin Yang, Baoxing Duan, Yintang Yang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/14/6/1166