Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Jezik: | English |
| Izdano: |
MDPI AG
2021-12-01
|
| Serija: | Nanomaterials |
| Teme: | |
| Online dostop: | https://www.mdpi.com/2079-4991/11/12/3311 |