High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temp...

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Bibliographic Details
Main Authors: Q. Courte, M. Rack, M. Nabet, P. Cardinael, J.-P. Raskin
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Silicon-on-Insulator (SOI) technology
effective resistivity
trap-rich (TR) substrate
Parasitic Surface Conduction (PSC)
RF characterization
RF substrate
Online Access:https://ieeexplore.ieee.org/document/9816115/

Internet

https://ieeexplore.ieee.org/document/9816115/

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