High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate
This work reports record-high three-terminal on-state drain-source breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{DS})$ </tex-math></inline-formula> of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect tra...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10182302/ |