High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate
This work reports record-high three-terminal on-state drain-source breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{DS})$ </tex-math></inline-formula> of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect tra...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10182302/ |
| _version_ | 1797770203494350848 |
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| author | Jian-Hong Ke Ching-Sung Lee Yu-Xuan Li Wei-Chou Hsu |
| author_facet | Jian-Hong Ke Ching-Sung Lee Yu-Xuan Li Wei-Chou Hsu |
| author_sort | Jian-Hong Ke |
| collection | DOAJ |
| description | This work reports record-high three-terminal on-state drain-source breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{DS})$ </tex-math></inline-formula> of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface passivation by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/drain ohmic contacts were obtained by devising an Mg-doped p++-GaN capper. Enhanced two-dimension hole gas (2DHG) characteristics and current densities have also been achieved by the devised p-GaN/GaN/AlN/Al0.3Ga0.7N heterostructure. The present p-channel GaN MOS-HFET design with (without) DFP has demonstrated superior on/off current ratio <inline-formula> <tex-math notation="LaTeX">$(I_{on}/I_{off}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$2\times 10^{6}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$9.2\times10\,\,^{\mathrm{ 5}}$ </tex-math></inline-formula>), maximum drain-source current density <inline-formula> <tex-math notation="LaTeX">$(I_{DS, max})$ </tex-math></inline-formula> of −9.5 (−10.6) mA/mm at <inline-formula> <tex-math notation="LaTeX">$V_{DS}\,\,=$ </tex-math></inline-formula> 20 V, two-terminal off-state gate-drain breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{GD})$ </tex-math></inline-formula> of 710 (520) V, and <inline-formula> <tex-math notation="LaTeX">$BV_{DS}$ </tex-math></inline-formula> of −735 (−545) V, respectively. The present design is suitable for applications in high-voltage complementary power-switching circuits of electric vehicle (EV) electronics. |
| first_indexed | 2024-03-12T21:19:50Z |
| format | Article |
| id | doaj.art-8bf1891360e8421eb672a4748a8a7521 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-12T21:19:50Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8bf1891360e8421eb672a4748a8a75212023-07-28T23:00:21ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011142142510.1109/JEDS.2023.329491110182302High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-PlateJian-Hong Ke0Ching-Sung Lee1https://orcid.org/0000-0002-3044-5073Yu-Xuan Li2Wei-Chou Hsu3Department of Electrical Engineering, National Cheng Kung University, Tainan City, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung City, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung City, TaiwanDepartment of Electrical Engineering, National Cheng Kung University, Tainan City, TaiwanThis work reports record-high three-terminal on-state drain-source breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{DS})$ </tex-math></inline-formula> of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface passivation by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/drain ohmic contacts were obtained by devising an Mg-doped p++-GaN capper. Enhanced two-dimension hole gas (2DHG) characteristics and current densities have also been achieved by the devised p-GaN/GaN/AlN/Al0.3Ga0.7N heterostructure. The present p-channel GaN MOS-HFET design with (without) DFP has demonstrated superior on/off current ratio <inline-formula> <tex-math notation="LaTeX">$(I_{on}/I_{off}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$2\times 10^{6}$ </tex-math></inline-formula> (<inline-formula> <tex-math notation="LaTeX">$9.2\times10\,\,^{\mathrm{ 5}}$ </tex-math></inline-formula>), maximum drain-source current density <inline-formula> <tex-math notation="LaTeX">$(I_{DS, max})$ </tex-math></inline-formula> of −9.5 (−10.6) mA/mm at <inline-formula> <tex-math notation="LaTeX">$V_{DS}\,\,=$ </tex-math></inline-formula> 20 V, two-terminal off-state gate-drain breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{GD})$ </tex-math></inline-formula> of 710 (520) V, and <inline-formula> <tex-math notation="LaTeX">$BV_{DS}$ </tex-math></inline-formula> of −735 (−545) V, respectively. The present design is suitable for applications in high-voltage complementary power-switching circuits of electric vehicle (EV) electronics.https://ieeexplore.ieee.org/document/10182302/P-channelGaNMOS-HFETnon-vacuum ultrasonic spray pyrolysis depositionAl₂O₃drain field-plate |
| spellingShingle | Jian-Hong Ke Ching-Sung Lee Yu-Xuan Li Wei-Chou Hsu High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate IEEE Journal of the Electron Devices Society P-channel GaN MOS-HFET non-vacuum ultrasonic spray pyrolysis deposition Al₂O₃ drain field-plate |
| title | High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate |
| title_full | High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate |
| title_fullStr | High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate |
| title_full_unstemmed | High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate |
| title_short | High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate |
| title_sort | high breakdown p channel gan mos hfets with al sub 2 sub o sub 3 sub dielectric and drain field plate |
| topic | P-channel GaN MOS-HFET non-vacuum ultrasonic spray pyrolysis deposition Al₂O₃ drain field-plate |
| url | https://ieeexplore.ieee.org/document/10182302/ |
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