High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate

High-Breakdown P-Channel GaN MOS-HFETs With Al<sub>2</sub>O<sub>3</sub>-Dielectric and Drain Field-Plate

This work reports record-high three-terminal on-state drain-source breakdown voltage <inline-formula> <tex-math notation="LaTeX">$(BV_{DS})$ </tex-math></inline-formula> of −735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect tra...

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Bibliographic Details
Main Authors:	Jian-Hong Ke, Ching-Sung Lee, Yu-Xuan Li, Wei-Chou Hsu
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	P-channel GaN MOS-HFET non-vacuum ultrasonic spray pyrolysis deposition Al₂O₃ drain field-plate
Online Access:	https://ieeexplore.ieee.org/document/10182302/

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