Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods

In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated devices show enhanced sensitivity by 16~20 times bett...

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Bibliographic Details
Main Authors: Ki-Nam Kim, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Jun-Kyo Jeong, Hi-Deok Lee, Ga-Won Lee
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/22/22/8907