High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted of periodically carbon-doped (PCD) GaN buffer layer and AlGaN back barrier layer. The PCD structure was proposed for reducing undesirable trapping eff...

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Bibliographic Details
Main Authors: Jun-Hyeok Lee, Jeong-Min Ju, Gokhan Atmaca, Jeong-Gil Kim, Seung-Hyeon Kang, Yong Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Sefer Bora Lisesivdin, Jung-Hee Lee
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
HEMT
periodically carbon-doped GaN
PCD
breakdown voltage
current collapse
Online Access:https://ieeexplore.ieee.org/document/8476974/

Internet

https://ieeexplore.ieee.org/document/8476974/

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