High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted of periodically carbon-doped (PCD) GaN buffer layer and AlGaN back barrier layer. The PCD structure was proposed for reducing undesirable trapping eff...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8476974/ |
| _version_ | 1819073738000302080 |
|---|---|
| author | Jun-Hyeok Lee Jeong-Min Ju Gokhan Atmaca Jeong-Gil Kim Seung-Hyeon Kang Yong Soo Lee Sang-Heung Lee Jong-Won Lim Ho-Sang Kwon Sefer Bora Lisesivdin Jung-Hee Lee |
| author_facet | Jun-Hyeok Lee Jeong-Min Ju Gokhan Atmaca Jeong-Gil Kim Seung-Hyeon Kang Yong Soo Lee Sang-Heung Lee Jong-Won Lim Ho-Sang Kwon Sefer Bora Lisesivdin Jung-Hee Lee |
| author_sort | Jun-Hyeok Lee |
| collection | DOAJ |
| description | In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted of periodically carbon-doped (PCD) GaN buffer layer and AlGaN back barrier layer. The PCD structure was proposed for reducing undesirable trapping effects, which resulted in effective suppression of the current collapse compared to that in conventional carbon buffer structure. To further improve the dynamic performances of the device and to increase the electron confinement of the 2-D electron gas (2-DEG) channel, AlGaN back barrier was inserted between the GaN channel and the PCD buffer layer, which results in greatly improved current collapse with slightly improved 2-DEG mobility compared to those of the device without back barrier. The OFF-state leakage current of the device with back-barrier is about 2 orders lower in magnitude than that of device without back barrier, which leads to the breakdown voltage of 2 kV and figure of merit of 2.27 GV<sup>2</sup>Ω<sup>-1</sup>cm<sup>-2</sup> for the device with LGD of 10 μm, one of the highest values ever reported for the GaN-based HEMTs. |
| first_indexed | 2024-12-21T17:58:23Z |
| format | Article |
| id | doaj.art-8c41fbcf096a4460860a2390b0d9f155 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-21T17:58:23Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-8c41fbcf096a4460860a2390b0d9f1552022-12-21T18:55:09ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-0161179118610.1109/JEDS.2018.28729758476974High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back BarrierJun-Hyeok Lee0https://orcid.org/0000-0001-8470-8150Jeong-Min Ju1https://orcid.org/0000-0002-8817-9177Gokhan Atmaca2https://orcid.org/0000-0002-8138-6632Jeong-Gil Kim3Seung-Hyeon Kang4Yong Soo Lee5Sang-Heung Lee6Jong-Won Lim7Ho-Sang Kwon8Sefer Bora Lisesivdin9Jung-Hee Lee10https://orcid.org/0000-0002-4785-3006School of Electronics Engineering, Kyungpook National University, Daegu, South KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu, South KoreaDepartment of Physics, Faculty of Science, Gazi University, Ankara, TurkeySchool of Electronics Engineering, Kyungpook National University, Daegu, South KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu, South KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu, South KoreaElectronics and Telecommunications Research Institute, Daejeon, South KoreaElectronics and Telecommunications Research Institute, Daejeon, South KoreaAgency for Defense Development, Daejeon, South KoreaDepartment of Physics, Faculty of Science, Gazi University, Ankara, TurkeySchool of Electronics Engineering, Kyungpook National University, Daegu, South KoreaIn this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted of periodically carbon-doped (PCD) GaN buffer layer and AlGaN back barrier layer. The PCD structure was proposed for reducing undesirable trapping effects, which resulted in effective suppression of the current collapse compared to that in conventional carbon buffer structure. To further improve the dynamic performances of the device and to increase the electron confinement of the 2-D electron gas (2-DEG) channel, AlGaN back barrier was inserted between the GaN channel and the PCD buffer layer, which results in greatly improved current collapse with slightly improved 2-DEG mobility compared to those of the device without back barrier. The OFF-state leakage current of the device with back-barrier is about 2 orders lower in magnitude than that of device without back barrier, which leads to the breakdown voltage of 2 kV and figure of merit of 2.27 GV<sup>2</sup>Ω<sup>-1</sup>cm<sup>-2</sup> for the device with LGD of 10 μm, one of the highest values ever reported for the GaN-based HEMTs.https://ieeexplore.ieee.org/document/8476974/AlGaN/GaNHEMTperiodically carbon-doped GaNPCDbreakdown voltagecurrent collapse |
| spellingShingle | Jun-Hyeok Lee Jeong-Min Ju Gokhan Atmaca Jeong-Gil Kim Seung-Hyeon Kang Yong Soo Lee Sang-Heung Lee Jong-Won Lim Ho-Sang Kwon Sefer Bora Lisesivdin Jung-Hee Lee High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier IEEE Journal of the Electron Devices Society AlGaN/GaN HEMT periodically carbon-doped GaN PCD breakdown voltage current collapse |
| title | High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier |
| title_full | High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier |
| title_fullStr | High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier |
| title_full_unstemmed | High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier |
| title_short | High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{ON}}$ </tex-math></inline-formula>) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier |
| title_sort | high figure of merit inline formula tex math notation latex v text br text 2 tex math inline formula inline formula tex math notation latex r text on tex math inline formula algan gan power hemt with periodically c doped gan buffer and algan back barrier |
| topic | AlGaN/GaN HEMT periodically carbon-doped GaN PCD breakdown voltage current collapse |
| url | https://ieeexplore.ieee.org/document/8476974/ |
| work_keys_str_mv | AT junhyeoklee highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT jeongminju highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT gokhanatmaca highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT jeonggilkim highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT seunghyeonkang highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT yongsoolee highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT sangheunglee highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT jongwonlim highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT hosangkwon highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT seferboralisesivdin highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier AT jungheelee highfigureofmeritinlineformulatexmathnotationlatexvtextbrtext2texmathinlineformulainlineformulatexmathnotationlatexrtextontexmathinlineformulaalganganpowerhemtwithperiodicallycdopedganbufferandalganbackbarrier |