Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

The thermal decomposition of silicon carbide (SiC), with the subsequent formation of graphene, can be achieved by heating treatment. Several heating processes have been applied for this purpose by using SiC, either in form of powder particles or monocrystalline substrate. In this work, instead of us...

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Bibliographic Details
Main Authors: Nierlly Karinni de Almeida Maribondo Galvão, Getúlio de Vasconcelos, Marcos Valentim Ribeiro dos Santos, Tiago Moreira Bastos Campos, Rodrigo Sávio Pessoa, Marciel Guerino, Mohamed Abdou Djouadi, Homero Santiago Maciel
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2016-09-01
Series:Materials Research
Subjects:
Polycrystalline SiC
Graphene
CO2 laser heating
SiC thermal decomposition
Raman spectroscopy
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392016000601329&tlng=en

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http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392016000601329&tlng=en

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