Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
Electron band alignment at interfaces of SiO2 with directly synthesized few-monolayer (ML) thin semiconducting MoS2 films is characterized by using field-dependent internal photoemission of electrons from the valence band of MoS2 into the oxide conduction band. We found that reducing the grown MoS2...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5002617 |