Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Electron band alignment at interfaces of SiO2 with directly synthesized few-monolayer (ML) thin semiconducting MoS2 films is characterized by using field-dependent internal photoemission of electrons from the valence band of MoS2 into the oxide conduction band. We found that reducing the grown MoS2...

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Detaylı Bibliyografya
Asıl Yazarlar: I. Shlyakhov, J. Chai, M. Yang, S. J. Wang, V. V. Afanas’ev, M. Houssa, A. Stesmans
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: AIP Publishing LLC 2018-02-01
Seri Bilgileri:APL Materials
Online Erişim:http://dx.doi.org/10.1063/1.5002617

Internet

http://dx.doi.org/10.1063/1.5002617

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