Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure
Abstract Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM). Cross‐sectional TEM images showed that the dislocations were filtered out effectively, through...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley
2022-12-01
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Series: | Micro & Nano Letters |
Online Access: | https://doi.org/10.1049/mna2.12145 |