Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure
Abstract Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM). Cross‐sectional TEM images showed that the dislocations were filtered out effectively, through...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-12-01
|
| Series: | Micro & Nano Letters |
| Online Access: | https://doi.org/10.1049/mna2.12145 |
| _version_ | 1811190127613968384 |
|---|---|
| author | Kejia Wang Tiantian Wei Yuzi Song Yahong Xie Xiaodong Hu Zhiyuan Cheng |
| author_facet | Kejia Wang Tiantian Wei Yuzi Song Yahong Xie Xiaodong Hu Zhiyuan Cheng |
| author_sort | Kejia Wang |
| collection | DOAJ |
| description | Abstract Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM). Cross‐sectional TEM images showed that the dislocations were filtered out effectively, through two 90° turns in GaN growth front with the unique serpentine channel structure, resulting in high crystal quality GaN materials over the top mask layer. Dislocation behaviours at different parts of the structure were investigated to understand the mechanism of dislocation density reduction. |
| first_indexed | 2024-04-11T14:46:04Z |
| format | Article |
| id | doaj.art-8cc2e454ca6a4b8a92980451de7603ab |
| institution | Directory Open Access Journal |
| issn | 1750-0443 |
| language | English |
| last_indexed | 2024-04-11T14:46:04Z |
| publishDate | 2022-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Micro & Nano Letters |
| spelling | doaj.art-8cc2e454ca6a4b8a92980451de7603ab2022-12-22T04:17:39ZengWileyMicro & Nano Letters1750-04432022-12-01171437738310.1049/mna2.12145Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structureKejia Wang0Tiantian Wei1Yuzi Song2Yahong Xie3Xiaodong Hu4Zhiyuan Cheng5School of Micro‐Nano Electronics Zhejiang University Hangzhou ChinaState Key Laboratory for Artificial Microstructure and Microscopic Physics School of Physics Peking University Beijing ChinaSchool of Micro‐Nano Electronics Zhejiang University Hangzhou ChinaDepartment of Materials Science and Engineering University of California Los Angeles Los Angeles USAState Key Laboratory for Artificial Microstructure and Microscopic Physics School of Physics Peking University Beijing ChinaSchool of Micro‐Nano Electronics Zhejiang University Hangzhou ChinaAbstract Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM). Cross‐sectional TEM images showed that the dislocations were filtered out effectively, through two 90° turns in GaN growth front with the unique serpentine channel structure, resulting in high crystal quality GaN materials over the top mask layer. Dislocation behaviours at different parts of the structure were investigated to understand the mechanism of dislocation density reduction.https://doi.org/10.1049/mna2.12145 |
| spellingShingle | Kejia Wang Tiantian Wei Yuzi Song Yahong Xie Xiaodong Hu Zhiyuan Cheng Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure Micro & Nano Letters |
| title | Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure |
| title_full | Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure |
| title_fullStr | Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure |
| title_full_unstemmed | Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure |
| title_short | Reduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure |
| title_sort | reduction mechanisms for dislocation densities in gan heteroepitaxy over si substrate patterned with a serpentine channel structure |
| url | https://doi.org/10.1049/mna2.12145 |
| work_keys_str_mv | AT kejiawang reductionmechanismsfordislocationdensitiesinganheteroepitaxyoversisubstratepatternedwithaserpentinechannelstructure AT tiantianwei reductionmechanismsfordislocationdensitiesinganheteroepitaxyoversisubstratepatternedwithaserpentinechannelstructure AT yuzisong reductionmechanismsfordislocationdensitiesinganheteroepitaxyoversisubstratepatternedwithaserpentinechannelstructure AT yahongxie reductionmechanismsfordislocationdensitiesinganheteroepitaxyoversisubstratepatternedwithaserpentinechannelstructure AT xiaodonghu reductionmechanismsfordislocationdensitiesinganheteroepitaxyoversisubstratepatternedwithaserpentinechannelstructure AT zhiyuancheng reductionmechanismsfordislocationdensitiesinganheteroepitaxyoversisubstratepatternedwithaserpentinechannelstructure |