Electron injection-induced effects in Si-doped β-Ga2O3
The impact of electron injection, using 10 keV beam of a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga2O3 was studied for temperatures ranging from room to 120°C. In-situ Electron Beam-Induced Current technique was employed to determine the diffusion length of minority...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-01-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5079730 |