Solution growth of chalcopyrite Cu(In1−xGax)Se2 single crystals for high open-circuit voltage photovoltaic device

Solution growth of chalcopyrite Cu(In1−xGax)Se2 single crystals for high open-circuit voltage photovoltaic device

I–III–VI2 Chalcopyrite Cu(In1−x Gax)Se2 (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without seconda...

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Bibliographic Details
Main Authors: Nagaoka Akira, Shigeeda Yusuke, Nishioka Kensuke, Masuda Taizo, Yoshino Kenji
Format: Article
Language:English
Published: De Gruyter 2021-12-01
Series:High Temperature Materials and Processes
Subjects:
cu(in1−x gax)se2
photovoltaic
open-circuit voltage
single crystal
solution growth
Online Access:https://doi.org/10.1515/htmp-2021-0047

Internet

https://doi.org/10.1515/htmp-2021-0047

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