Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications
In this study, we deposited a series of Ag and N co-doped ZnO thin films (ZnAgO:N) with different Ag atomic percentage (at. %) ratios on flexible polyimide (PI) substrates to realize p-type ZnO-based thin films for wearable thermoelectric applications by in situ co-sputtering of ZnO and Ag by RF and...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5140618 |
| _version_ | 1817987858516934656 |
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| author | Buil Jeon Chongsei Yoon Giwan Yoon |
| author_facet | Buil Jeon Chongsei Yoon Giwan Yoon |
| author_sort | Buil Jeon |
| collection | DOAJ |
| description | In this study, we deposited a series of Ag and N co-doped ZnO thin films (ZnAgO:N) with different Ag atomic percentage (at. %) ratios on flexible polyimide (PI) substrates to realize p-type ZnO-based thin films for wearable thermoelectric applications by in situ co-sputtering of ZnO and Ag by RF and DC magnetron sputtering in a mixture of Ar and N2O gases. To evaluate the thermoelectric performance of these ZnAgO:N thin films, we measured the Seebeck coefficient S and electrical conductivity σ of the thin films with various Ag at. % ratios and calculated the power factor S2σ. These measurements confirmed that the co-doping of Ag and N into ZnO is an effective method for fabricating p-type ZnAgO:N thin films with σ in the range of about 105–3.3 × 106 S/m, as a function of Ag at. % ratio on the flexible PI substrates. In addition, the presence of an optimal Ag at. % ratio that leads to a maximum S2σ for the p-type ZnAgO:N thin films was observed. Raman spectroscopy and x-ray photoelectron spectroscopy revealed that the p-type conductivity in ZnAgO:N thin films originates from the acceptors AgZn and NO formed by the co-dopants Ag and N. As a result, the S and σ of the p-type ZnAgO:N thin films were investigated to be affected significantly by the acceptors and defects formed by the Ag and N co-dopants in the thin films. The influence of AgZn and NO on the appearance of the p-type conductivity in ZnAgO:N thin films and S and σ of the thin films was intensively studied. |
| first_indexed | 2024-04-14T00:27:35Z |
| format | Article |
| id | doaj.art-8cd891bc973f4faa98998c7e7b4042e0 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-14T00:27:35Z |
| publishDate | 2020-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-8cd891bc973f4faa98998c7e7b4042e02022-12-22T02:22:41ZengAIP Publishing LLCAIP Advances2158-32262020-07-01107075201075201-510.1063/1.5140618Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applicationsBuil Jeon0Chongsei Yoon1Giwan Yoon2School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South KoreaSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South KoreaIn this study, we deposited a series of Ag and N co-doped ZnO thin films (ZnAgO:N) with different Ag atomic percentage (at. %) ratios on flexible polyimide (PI) substrates to realize p-type ZnO-based thin films for wearable thermoelectric applications by in situ co-sputtering of ZnO and Ag by RF and DC magnetron sputtering in a mixture of Ar and N2O gases. To evaluate the thermoelectric performance of these ZnAgO:N thin films, we measured the Seebeck coefficient S and electrical conductivity σ of the thin films with various Ag at. % ratios and calculated the power factor S2σ. These measurements confirmed that the co-doping of Ag and N into ZnO is an effective method for fabricating p-type ZnAgO:N thin films with σ in the range of about 105–3.3 × 106 S/m, as a function of Ag at. % ratio on the flexible PI substrates. In addition, the presence of an optimal Ag at. % ratio that leads to a maximum S2σ for the p-type ZnAgO:N thin films was observed. Raman spectroscopy and x-ray photoelectron spectroscopy revealed that the p-type conductivity in ZnAgO:N thin films originates from the acceptors AgZn and NO formed by the co-dopants Ag and N. As a result, the S and σ of the p-type ZnAgO:N thin films were investigated to be affected significantly by the acceptors and defects formed by the Ag and N co-dopants in the thin films. The influence of AgZn and NO on the appearance of the p-type conductivity in ZnAgO:N thin films and S and σ of the thin films was intensively studied.http://dx.doi.org/10.1063/1.5140618 |
| spellingShingle | Buil Jeon Chongsei Yoon Giwan Yoon Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications AIP Advances |
| title | Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications |
| title_full | Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications |
| title_fullStr | Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications |
| title_full_unstemmed | Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications |
| title_short | Realization of p-type ZnAgO:N thin films on flexible polyimide substrates through co-sputtering for wearable thermoelectric applications |
| title_sort | realization of p type znago n thin films on flexible polyimide substrates through co sputtering for wearable thermoelectric applications |
| url | http://dx.doi.org/10.1063/1.5140618 |
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