Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing
The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2&l...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/4/763 |
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| author | Liesbeth Mulder Hanne van de Glind Alexander Brinkman Omar Concepción |
| author_facet | Liesbeth Mulder Hanne van de Glind Alexander Brinkman Omar Concepción |
| author_sort | Liesbeth Mulder |
| collection | DOAJ |
| description | The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> films deposited by molecular beam epitaxy on Al<sub>2</sub>O<sub>3</sub> (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators. |
| first_indexed | 2024-03-11T08:20:02Z |
| format | Article |
| id | doaj.art-8cea44e5e40845fcbb9ce1800ec78e48 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T08:20:02Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-8cea44e5e40845fcbb9ce1800ec78e482023-11-16T22:28:34ZengMDPI AGNanomaterials2079-49912023-02-0113476310.3390/nano13040763Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal AnnealingLiesbeth Mulder0Hanne van de Glind1Alexander Brinkman2Omar Concepción3MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsThe study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> films deposited by molecular beam epitaxy on Al<sub>2</sub>O<sub>3</sub> (001) substrates. Atomic force microscopy shows that by employing an in situ thermal post anneal, the surface roughness is reduced significantly, and transmission electron microscopy reveals that structural defects are diminished substantially. Thence, these films provide a great platform for the research on the thickness-dependent properties of topological insulators.https://www.mdpi.com/2079-4991/13/4/763topological insulatorsmooth surfacesmolecular beam epitaxyin situ thermal post anneal(Bi<sub>1−x</sub>Sb<sub>x</sub>)<sub>2</sub>Te<sub>3</sub> |
| spellingShingle | Liesbeth Mulder Hanne van de Glind Alexander Brinkman Omar Concepción Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing Nanomaterials topological insulator smooth surfaces molecular beam epitaxy in situ thermal post anneal (Bi<sub>1−x</sub>Sb<sub>x</sub>)<sub>2</sub>Te<sub>3</sub> |
| title | Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing |
| title_full | Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing |
| title_fullStr | Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing |
| title_full_unstemmed | Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing |
| title_short | Enhancement of the Surface Morphology of (Bi<sub>0.4</sub>Sb<sub>0.6</sub>)<sub>2</sub>Te<sub>3</sub> Thin Films by In Situ Thermal Annealing |
| title_sort | enhancement of the surface morphology of bi sub 0 4 sub sb sub 0 6 sub sub 2 sub te sub 3 sub thin films by in situ thermal annealing |
| topic | topological insulator smooth surfaces molecular beam epitaxy in situ thermal post anneal (Bi<sub>1−x</sub>Sb<sub>x</sub>)<sub>2</sub>Te<sub>3</sub> |
| url | https://www.mdpi.com/2079-4991/13/4/763 |
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