Towards nonvolatile memory devices based on ferroelectric polymers

We show the ferroelectric switching of a thin film of the copolymer of 60 mol% vinylidene fluoride and 40 mol% trifluoroethylene when it is subjected to a sinusoidal electric field from 10 Hz to 100 kHz using a conductive probe chip of AFM. A switching speed of 1.6 ×106 s-1 (switching time of 660 ns...

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Bibliographic Details
Main Authors: Naoto Tsutsumi, Xue Bai, Wataru Sakai
Format: Article
Language:English
Published: AIP Publishing LLC 2012-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3691825