A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic

A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic

Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic multilayers or junctions exhibits high magnetic-field...

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Bibliographic Details
Main Authors: Jiang Nan, Kun Zhang, Yue Zhang, Shaohua Yan, Zhizhong Zhang, Zhenyi Zheng, Guanda Wang, Qunwen Leng, Youguang Zhang, Weisheng Zhao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Diode-enhanced
giant magnetoresistance
magnetic multilayers
reconfigurable logic
spintronics
Online Access:https://ieeexplore.ieee.org/document/9090193/

Internet

https://ieeexplore.ieee.org/document/9090193/

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