A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic
Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic multilayers or junctions exhibits high magnetic-field...
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| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9090193/ |
| _version_ | 1819158813281878016 |
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| author | Jiang Nan Kun Zhang Yue Zhang Shaohua Yan Zhizhong Zhang Zhenyi Zheng Guanda Wang Qunwen Leng Youguang Zhang Weisheng Zhao |
| author_facet | Jiang Nan Kun Zhang Yue Zhang Shaohua Yan Zhizhong Zhang Zhenyi Zheng Guanda Wang Qunwen Leng Youguang Zhang Weisheng Zhao |
| author_sort | Jiang Nan |
| collection | DOAJ |
| description | Magnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic multilayers or junctions exhibits high magnetic-field sensitivity and has been successfully applied in magnetic sensors and hard disk drive (HDD) read heads. However, the relatively small MR ratio becomes the Achilles' Heel for its further application in high-reliability electronic systems. In this paper, we propose a scheme to amplify the GMR effect of a multilayer strip by utilizing the nonlinear transport property of a diode. MR ratio up to 6947% is obtained with a magnetic field as small as 50 Oe. A theoretical model is established to describe the amplification behavior and various factors influencing MR ratio are experimentally analyzed. Based on this scheme, reliable logic functions have been carried out, which can be reconfigured by changing the working current. Our work can be extended to enhance the MR effect of any two-terminal MR device and has the potential to build emerging high-performance computing systems. |
| first_indexed | 2024-12-22T16:30:37Z |
| format | Article |
| id | doaj.art-8d2d77d07aa145188ced4bc23f2a1d79 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T16:30:37Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-8d2d77d07aa145188ced4bc23f2a1d792022-12-21T18:20:04ZengIEEEIEEE Access2169-35362020-01-018875848759110.1109/ACCESS.2020.29934609090193A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable LogicJiang Nan0Kun Zhang1Yue Zhang2https://orcid.org/0000-0001-6893-7199Shaohua Yan3Zhizhong Zhang4Zhenyi Zheng5Guanda Wang6Qunwen Leng7Youguang Zhang8Weisheng Zhao9Fert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaFert Beijing Research Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), School of Microelectronics BeihangUniversity, Beijing, ChinaMagnetoresistance (MR) effects have been intensively investigated and widely recognized as an effective path for realizing information sensing, storage, and processing. In particular, giant MR (GMR) effect discovered in ferromagnetic/nonmagnetic multilayers or junctions exhibits high magnetic-field sensitivity and has been successfully applied in magnetic sensors and hard disk drive (HDD) read heads. However, the relatively small MR ratio becomes the Achilles' Heel for its further application in high-reliability electronic systems. In this paper, we propose a scheme to amplify the GMR effect of a multilayer strip by utilizing the nonlinear transport property of a diode. MR ratio up to 6947% is obtained with a magnetic field as small as 50 Oe. A theoretical model is established to describe the amplification behavior and various factors influencing MR ratio are experimentally analyzed. Based on this scheme, reliable logic functions have been carried out, which can be reconfigured by changing the working current. Our work can be extended to enhance the MR effect of any two-terminal MR device and has the potential to build emerging high-performance computing systems.https://ieeexplore.ieee.org/document/9090193/Diode-enhancedgiant magnetoresistancemagnetic multilayersreconfigurable logicspintronics |
| spellingShingle | Jiang Nan Kun Zhang Yue Zhang Shaohua Yan Zhizhong Zhang Zhenyi Zheng Guanda Wang Qunwen Leng Youguang Zhang Weisheng Zhao A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic IEEE Access Diode-enhanced giant magnetoresistance magnetic multilayers reconfigurable logic spintronics |
| title | A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic |
| title_full | A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic |
| title_fullStr | A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic |
| title_full_unstemmed | A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic |
| title_short | A Diode-Enhanced Scheme for Giant Magnetoresistance Amplification and Reconfigurable Logic |
| title_sort | diode enhanced scheme for giant magnetoresistance amplification and reconfigurable logic |
| topic | Diode-enhanced giant magnetoresistance magnetic multilayers reconfigurable logic spintronics |
| url | https://ieeexplore.ieee.org/document/9090193/ |
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