Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence o...

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Bibliographic Details
Main Authors: Manna Kumari Mishra, Rajesh K. Sharma, Rachna Manchanda, Rajesh K. Bag, Om Prakash Thakur, Rangarajan Muralidharan
Format: Article
Language:English
Published: AIP Publishing LLC 2014-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4896192

Internet

http://dx.doi.org/10.1063/1.4896192

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