The effect of ion implantation on structural damage of сompositionally graded AlGaN layers
Compositionally graded AlxGa1–xN alloys with the Al concentration in the (7 ≤ x ≤ 32) range were implanted with (Ar+) ions to study the structural and strain changes (strain engineering). It was shown that ion-implantation leads to ~0.3…0.46% hydrostatic strains and a relatively low damage of the cr...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2019-03-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
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| Online Access: | http://journal-spqeo.org.ua/n1_2019/P119-129abstr.html |