PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES
The layers of nanoporous silicon are formed by using the method of electrochemical anodization on the surface of silicon polished wafers with the surface highly-doped n+ layer. The layers were fabricated at the constant direct current using the anodization process and at the current, which varies ac...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Al-Farabi Kazakh National University
2009-12-01
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| Series: | Вестник. Серия физическая |
| Online Access: | https://bph.kaznu.kz/index.php/zhuzhu/article/view/229 |
| _version_ | 1798030664020262912 |
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| author | T. I. Taubayev V. E. Nikulin Ye. T. Taubayev K. K. Dikhanbayev |
| author_facet | T. I. Taubayev V. E. Nikulin Ye. T. Taubayev K. K. Dikhanbayev |
| author_sort | T. I. Taubayev |
| collection | DOAJ |
| description | The layers of nanoporous silicon are formed by using the method of electrochemical anodization on the surface of silicon polished wafers with the surface highly-doped n+ layer. The layers were fabricated at the constant direct current using the anodization process and at the current, which varies according to the certain time law. The electrochemical anodization was performed in the standard cell and by using capillary method, as well. The dependence of the spectral reflection index on various of layer preparation (current density, etching time and the time dependence of the current density) is investigated. |
| first_indexed | 2024-04-11T19:45:04Z |
| format | Article |
| id | doaj.art-8d89d6b6fbeb4791bbbd13d6788d7785 |
| institution | Directory Open Access Journal |
| issn | 1563-0315 2663-2276 |
| language | English |
| last_indexed | 2024-04-11T19:45:04Z |
| publishDate | 2009-12-01 |
| publisher | Al-Farabi Kazakh National University |
| record_format | Article |
| series | Вестник. Серия физическая |
| spelling | doaj.art-8d89d6b6fbeb4791bbbd13d6788d77852022-12-22T04:06:32ZengAl-Farabi Kazakh National UniversityВестник. Серия физическая1563-03152663-22762009-12-013147377PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICEST. I. Taubayev0V. E. Nikulin1Ye. T. Taubayev2K. K. Dikhanbayev3IETP, Al-Farabi Kazakh National University, Kazakhstan, AlmatyIETP, Al-Farabi Kazakh National University, Kazakhstan, AlmatyIETP, Al-Farabi Kazakh National University, Kazakhstan, AlmatyIETP, Al-Farabi Kazakh National University, Kazakhstan, AlmatyThe layers of nanoporous silicon are formed by using the method of electrochemical anodization on the surface of silicon polished wafers with the surface highly-doped n+ layer. The layers were fabricated at the constant direct current using the anodization process and at the current, which varies according to the certain time law. The electrochemical anodization was performed in the standard cell and by using capillary method, as well. The dependence of the spectral reflection index on various of layer preparation (current density, etching time and the time dependence of the current density) is investigated.https://bph.kaznu.kz/index.php/zhuzhu/article/view/229 |
| spellingShingle | T. I. Taubayev V. E. Nikulin Ye. T. Taubayev K. K. Dikhanbayev PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES Вестник. Серия физическая |
| title | PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES |
| title_full | PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES |
| title_fullStr | PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES |
| title_full_unstemmed | PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES |
| title_short | PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES |
| title_sort | preparation and optical properties of nanostructured antireflective layers for si photodevices |
| url | https://bph.kaznu.kz/index.php/zhuzhu/article/view/229 |
| work_keys_str_mv | AT titaubayev preparationandopticalpropertiesofnanostructuredantireflectivelayersforsiphotodevices AT venikulin preparationandopticalpropertiesofnanostructuredantireflectivelayersforsiphotodevices AT yettaubayev preparationandopticalpropertiesofnanostructuredantireflectivelayersforsiphotodevices AT kkdikhanbayev preparationandopticalpropertiesofnanostructuredantireflectivelayersforsiphotodevices |