A novel design of a silicon PIN diode for increasing the breakdown voltage
Abstract This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated an...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi-IET
2022-09-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12120 |