Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Small variations in the density of dopants change the physical properties of complex oxides. Here, the authors resolve doping levels in three dimension, imaging the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O3.

Bibliographic Details
Main Authors: K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier
Format: Article
Language:English
Published: Nature Portfolio 2022-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-32189-0

Internet

https://doi.org/10.1038/s41467-022-32189-0

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