Piezoelectric Layer Transfer Process for MEMS
Piezoelectric MEMS devices were fabricated on 200 mm Si wafers using both deposited and layer-transferred PZT films. In both cases, the PZT-based devices showed ferroelectric and piezoelectric properties at the level of current state-of-the-art devices. The wafer-to-wafer piezoelectric layer transfe...
| Những tác giả chính: | , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
MDPI AG
2024-03-01
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| Loạt: | Proceedings |
| Những chủ đề: | |
| Truy cập trực tuyến: | https://www.mdpi.com/2504-3900/97/1/114 |